Three Modes of Inhibiting a Tetrameric Antibiotic Target From Bacillius Anthracis
Grant number: W911NF-07-1-0105 | Funding period: 2007 - 2012
Completed
Abstract
It is well established that in order to produce large-format LWIR HgCdTe FPAs for third-generation IR systems, Si substrates must be used. In the DoD Militarily Critical Technologies List (December 2005), HgCdTe/Si is listed as a critical material and achieving an etch pit density (EPD) < 1x106 cm-2 is identified as a critical technology parameter. Thus it is imperative that a manufacturable technique to control EPD in HgCdTe/Si be demonstrated. In this Army STTR program, Agiltron, Rensselaer Polytechnic Institute, and Raytheon Vision Systems will fabricate LWIR HgCdTe/Si FPAs by producing low-defectivity HgCdTe films on lattice-mismatched Si substrates. Employing the innovative epitaxial..
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